Speaker: Vincent gambin
Affiliation: Northrop Grumman
Electronic Materials Research at Northrop Grumman
I will present an overview of a new research initiative at Northrop Grumman called NG Next. NG Next Basic Re-search pursues use-inspired fundamental research in laboratories organized across several interdisciplinary thrust areas. My presentation will focus on the Semiconductor and Devices and Nanomaterials groups, and include early results from select research topics. First I’ll discuss the large-scale synthesis of few-layered black arsenic phos-phorus (AsP) alloys via solid-source molecular beam epitaxy (MBE). Post-growth hermetic passivation and subse-quent high-temperature thermal annealing results in crystalline films as verified by Raman spectroscopy and structural metrology. Our method affords precise synthetic control of AsP thin films, resulting in a range of tuna-ble compositions with varying electronic and optical properties. Next I’ll discuss additive manufactured phase-change materials (PCM) by aerosol jet printing. This approach may lead to future cost savings, fast turnaround time, and fully reconfigurable wireless communication, radar and phased array electronics systems. To our knowledge, this is the first reported experimental demonstration of GeTe PCM structures based on additive 3D printing technology.
Vincent Gambin received his PhD from Stanford University in Material Science and Engineering. He is currently leading the New Semiconductors and Devices group in NG Next Basic Research studying new materials and devic-es for next generation electronics. He is also the principal investigator for DARPA’s ICECool Applications program developing high-power GaN MMICs cooled with embedded diamond microfluidics. He’s worked at Northrop Grumman for 15 years in the field of high-speed RF electronics developing advanced GaAs, InP and GaN devices.
Date(s) - Jun 02, 2017
10:30 am - 12:00 pm